Description General description Atomic number of base material: 14 Silicon Application Precursor for the rapid, low temperature deposition of epitaxial silicon and silicon-based dielectrics. Packaging 20 g in stainless steel cylinder Features and Benefits Disilane is used for the deposition of amorphous silicon, epitaxial silicon and silicon based dielectrics via rapid low-temperature chemical vapor depsition (LTCVD). Disilane is also used in the epitaxial growth of SiGe films by molecular beam epitaxy (MBE) in conjunction with solid sources of germanium. Precursor for the rapid, low temperature deposition of epitaxial silicon and silicon-based dielectrics. Recommended products Stainless steel regulators Z527416 or Z527424 are recommended.